Так создание я, вроде, Шокли не приписывал, только идею.
Тоже абсурд.
Шокли имел патент на полевой транзистор
См. выше: не имел.
Про то, что он не знает, что у них с Браттейном было в первом опыте говорил сам Бардин (ссылку не дам, мне это в апокрифах передавали), и воспроизвести такой результат они потом не смогли.
Дык они вообще почти ничего воспроизвести не могли. Именно когда научились воспроизводить - полезли патентовать и ставить на поток. Нормальная работа наощупь, включая научную (физику поверхности).
https://en.wikipedia.org/wiki/John_Bardeen#Career_and_research
Цитата:
In October 1945, Bardeen began work at Bell Labs. He was a member of a solid-state physics group, led by William Shockley and chemist Stanley Morgan. Other personnel working in the group were Walter Brattain, physicist Gerald Pearson, chemist Robert Gibney, electronics expert Hilbert Moore and several technicians.
The assignment of the group was to seek a solid-state alternative to fragile glass vacuum tube amplifiers. Their first attempts were based on Shockley's ideas about using an external electrical field on a semiconductor to affect its conductivity. These experiments mysteriously failed every time in all sorts of configurations and materials. The group was at a standstill until Bardeen suggested a theory that invoked surface states that prevented the field from penetrating the semiconductor. The group changed its focus to study these surface states, and they met almost daily to discuss the work. The rapport of the group was excellent, and ideas were freely exchanged.[13] By the winter of 1946 they had enough results that Bardeen submitted a paper on the surface states to Physical Review. Brattain started experiments to study the surface states through observations made while shining a bright light on the semiconductor's surface. This led to several more papers (one of them co-authored with Shockley), which estimated the density of the surface states to be more than enough to account for their failed experiments. The pace of the work picked up significantly when they started to surround point contacts between the semiconductor and the conducting wires with electrolytes.
On December 23, 1947, Bardeen and Brattain—working without Shockley—succeeded in creating a point-contact transistor that achieved amplification. By the next month, Bell Labs' patent attorneys started to work on the patent applications.
Bell Labs' attorneys soon discovered that Shockley's field effect principle had been anticipated and patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.
Shockley took the lion's share of the credit in public for the invention of transistor, which led to a deterioration of Bardeen's relationship with Shockley. Bell Labs management, however, consistently presented all three inventors as a team.
https://en.wikipedia.org/wiki/Walter_Houser_Brattain#Scientific_work
Цитата:
As early as the 1930s Brattain worked with William B. Shockley on the idea of a semiconductor amplifier that used copper oxide, an early and unsuccessful attempt at creating a field effect transistor. Other researchers at Bell and elsewhere were also experimenting with semiconductors, using materials such as germanium and silicon, but the pre-war research effort was somewhat haphazard and lacked strong theoretical grounding.
In 1945, Bell Labs reorganized and created a group...
According to theories of the time, Shockley's field effect transistor, a cylinder coated thinly with silicon and mounted close to a metal plate, should have worked. He ordered Brattain and Bardeen to find out why it wouldn't. During November and December, the two men carried out a variety of experiments, attempting to determine why Shockley's device wouldn't amplify. Bardeen was a brilliant theorist; Brattain, equally importantly, "had an intuitive feel for what you could do in semiconductors".
As described by Bardeen, "The initial experiments with the gold spot suggested immediately that holes were being introduced into the germanium block, increasing the concentration of holes near the surface. The names emitter and collector were chosen to describe this phenomenon. The only question was how the charge of the added holes was compensated. Our first thought was that the charge was compensated by surface states. Shockley later suggested that the charge was compensated by electrons in the bulk and suggested the junction transistor geometry... Later experiments carried out by Brattain and me showed that very likely both occur in the point-contact transistor."
On December 23, 1947, Walter Brattain, John Bardeen, and William B. Shockley demonstrated the first working transistor to their colleagues at Bell Laboratories.
И так далее, описания приборов достаточно подробны.
-- 05.08.2017 00:38:12 --Самое неприятное чтиво по ссылке
https://en.wikipedia.org/wiki/William_Shockley#CareerВ общем, дела обстояли так: идея носилась в воздухе, но Шокли очень хотел запатентовать её как свою личную, и вёл себя неэтично в связи с этим. В том числе, и рассказывал впоследствии при любой возможности, что именно он её автор.
Вы,
amon, по сути пересказываете "версию Шокли", которая опровергнута фактами.
